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Year Number of Results
2005 1
2006 1
2007 2
2008 2
2009 1
2011 4
2013 3
2014 5
2015 1
2016 3
2017 1
2018 4
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2020 1
2021 3
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2023 3
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39 results

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Page 1
Reconfigurable Multivalue Logic Functions of a Silicon Ellipsoidal Quantum-Dot Transistor Operating at Room Temperature.
Lee Y, Lee JW, Lee S, Hiramoto T, Wang KL. Lee Y, et al. ACS Nano. 2021 Nov 23;15(11):18483-18493. doi: 10.1021/acsnano.1c08208. Epub 2021 Oct 21. ACS Nano. 2021. PMID: 34672517
Reconfigurable multivalue logic functions, which can perform the versatile arithmetic computation of weighted electronic data information, are demonstrated at room temperature on an all-around-gate silicon ellipsoidal quantum-dot transistor. The large single-hole tr …
Reconfigurable multivalue logic functions, which can perform the versatile arithmetic computation of weighted electronic data information, a …
Temperature-Dependent Electrical Characteristics of Silicon Biristor.
Kim E, Lim D. Kim E, et al. Micromachines (Basel). 2023 Nov 28;14(12):2165. doi: 10.3390/mi14122165. Micromachines (Basel). 2023. PMID: 38138334 Free PMC article.
The proposed biristor exhibits low latch voltages owing to the surface accumulation layer transistor concept. ...Mechanisms of temperature-dependent change in latch voltage were analyzed using energy band diagrams. This temperature-dependent analysis on si …
The proposed biristor exhibits low latch voltages owing to the surface accumulation layer transistor concept. ...Mechanisms of …
Stable organic thin-film transistors.
Jia X, Fuentes-Hernandez C, Wang CY, Park Y, Kippelen B. Jia X, et al. Sci Adv. 2018 Jan 12;4(1):eaao1705. doi: 10.1126/sciadv.aao1705. eCollection 2018 Jan. Sci Adv. 2018. PMID: 29340301 Free PMC article.
Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that o …
Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes …
Optimized operation of silicon nanowire field effect transistor sensors.
Rim T, Meyyappan M, Baek CK. Rim T, et al. Nanotechnology. 2014 Dec 19;25(50):505501. doi: 10.1088/0957-4484/25/50/505501. Epub 2014 Nov 25. Nanotechnology. 2014. PMID: 25422407
Ion-sensitive field effect transistors have been advanced in recent years by utilizing silicon nanowires (Si-NWs), but establishing their optimized operation regime is an area of ongoing research. ...The honeycomb nanowire structure shows enhanced noise characterist …
Ion-sensitive field effect transistors have been advanced in recent years by utilizing silicon nanowires (Si-NWs), but establi …
An Ultralow Power Mixed Dimensional Heterojunction Transistor Based on the Charge Plasma pn Junction.
Sul O, Seo H, Choi E, Kim S, Gong J, Bang J, Ju H, Oh S, Lee Y, Sun H, Kwon M, Kang K, Hong J, Yang EH, Chung Y, Lee SB. Sul O, et al. Small. 2022 Jul;18(29):e2202153. doi: 10.1002/smll.202202153. Epub 2022 Jun 26. Small. 2022. PMID: 35754305
Here, hole doping of a TMDC, tungsten disulfide (WS(2) ) using the silicon substrate as the dopant medium is demonstrated. An ultralow-power current sourcing transistor or a gated WS(2) pn diode is fabricated based on a charge plasma pn heterojunction formed between …
Here, hole doping of a TMDC, tungsten disulfide (WS(2) ) using the silicon substrate as the dopant medium is demonstrated. An ultralo …
Negative Differential Resistance in Oxygen-ion Conductor Yttria-stabilized Zirconia for Extreme Environment Electronics.
Yuan Y, Yu H, Podpirka A, Ostdiek P, Srinivasan R, Ramanathan S. Yuan Y, et al. ACS Appl Mater Interfaces. 2022 Sep 7;14(35):40116-40125. doi: 10.1021/acsami.2c09944. Epub 2022 Aug 23. ACS Appl Mater Interfaces. 2022. PMID: 35997538
A stable and switchable YSZ NDR device is realized with a high peak-to-valley current ratio of 5.8 at 543 K. Utilizing the NDR effect, we demonstrate a proof-of-concept switchable ternary inverter by interfacing with a silicon transistor. Oxygen-ion conductor …
A stable and switchable YSZ NDR device is realized with a high peak-to-valley current ratio of 5.8 at 543 K. Utilizing the NDR effect …
Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films.
Ha TJ, Chen K, Chuang S, Yu KM, Kiriya D, Javey A. Ha TJ, et al. Nano Lett. 2015 Jan 14;15(1):392-7. doi: 10.1021/nl5037098. Epub 2014 Dec 3. Nano Lett. 2015. PMID: 25437145
Air-stable n-doping of carbon nanotubes is presented by utilizing SiN(x) thin films deposited by plasma-enhanced chemical vapor deposition. ...The devices are highly stable without any noticeable change in the electrical properties upon exposure to ambient air for 3 …
Air-stable n-doping of carbon nanotubes is presented by utilizing SiN(x) thin films deposited by plasma-enhanced chemical vapor depos …
Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications.
Zaslavsky A, Richter CA, Shrestha PR, Hoskins BD, Le ST, Madhavan A, McClelland JJ. Zaslavsky A, et al. Appl Phys Lett. 2021;119(4):10.1063/5.0060343. doi: 10.1063/5.0060343. Appl Phys Lett. 2021. PMID: 36873257 Free PMC article.
Cryogenic operation of complementary metal oxide semiconductor (CMOS) silicon transistors is crucial for quantum information science, but it brings deviations from standard transistor operation. Here, we report on sharp current jumps and stable hystere …
Cryogenic operation of complementary metal oxide semiconductor (CMOS) silicon transistors is crucial for quantum information s …
A ferroelectric relaxor polymer-enhanced p-type WSe(2) transistor.
Yin C , Wang X , Chen Y , Li D , Lin T , Sun S , Shen H , Du P , Sun J , Meng X , Chu J , Wong HF , Leung CW , Wang Z , Wang J . Yin C , et al. Nanoscale. 2018 Jan 25;10(4):1727-1734. doi: 10.1039/c7nr08034d. Nanoscale. 2018. PMID: 29308498
However, the Fermi level of WSe(2) is close to the middle of the band gap, which will induce a high contact resistance with metals and thus limit the field effect mobility. In this case, a high work voltage is always required to achieve a large ON/OFF ratio. Herein, a s …
However, the Fermi level of WSe(2) is close to the middle of the band gap, which will induce a high contact resistance with metals and thus …
HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides.
Mleczko MJ, Zhang C, Lee HR, Kuo HH, Magyari-Köpe B, Moore RG, Shen ZX, Fisher IR, Nishi Y, Pop E. Mleczko MJ, et al. Sci Adv. 2017 Aug 11;3(8):e1700481. doi: 10.1126/sciadv.1700481. eCollection 2017 Aug. Sci Adv. 2017. PMID: 28819644 Free PMC article.
The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO(2) as a high-quality "native" insulator. ...We use spectroscopic a …
The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-v …
39 results